Method and product for fabricating a resonant-bridge microaccelerometer
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 16, 1990
Grant Date -
N/A
app pub date -
Dec 27, 1988
filing date -
Dec 27, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A resonant bridge microaccelerometer is formed using patterned Silicon-on-Insulator (SOI) material. A buried layer is formed in the silicon substrate using preferably oxygen ion implanting techniques. A predetermined proof mass is subsequently formed by selective deposition of an appropriate material on an epitaxially grown layer of silicon generally over the buried layer. The buried layer is subsequently removed by a hydrofluoric acid etch, thereby forming a gap generally everywhere therebetween the proof mass and the supporting silicon substrate, and delineating the resonant microbridges within the microaccelerometer.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully