Laser beam scanning method for forming via holes in polymer materials
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 16, 1990
Grant Date -
N/A
app pub date -
Feb 14, 1989
filing date -
Feb 14, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The surface of a polymer dielectric layer is scanned repeatedly with a high energy continuous wave laser in a pattern to create via holes of desired size, shape and depth. This is followed by a short plasma etch. The via holes are produced at commercial production rates under direct computer control without use of masks and without damage to conductor material underlying the dielectric layer. A two-step technique usable to form a large hole to a partial depth in the dielectric layer and several smaller diameter holes within the large hole through the remainder of the dielectric layer depth allows formation of a large number of holes in a given area of a thick dielectric layer.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully