HF gas etching of wafers in an acid processor
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United States of America Patent
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Feb 13, 1990
Grant Date -
N/A
app pub date -
Apr 7, 1989
filing date -
Apr 7, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Batch processing of semiconductor wafers utilizing a gas phase etching with anhydrous hydrogen fluoride gas flowing between wafers in a wafer carrier. The etching may take place in a bowl with the wafer carrier mounted on a rotor in the closed bowl. The etchant gas may include a small amount of water vapor, along with the anhydrous hydrogen fluoride gas, as may be needed to commence the etching process. The etching may take place with the wafers arranged in a stack in the wafer carrier and extending along or on the rotation axis.
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