Sputtering method and apparatus
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United States of America Patent
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Feb 20, 1990
Grant Date -
N/A
app pub date -
Jan 20, 1988
filing date -
Jan 23, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A sputtering method and apparatus for use in forming thin films on a substrate. The power output of a sputtering power source is periodically changed to a high level power and a low level power, and each film is deposited to a thickness corresponding to the integrated value of the high level power, whereby a desired thickness can be obtained in any of multilayer films having mutually different film thickness ratios.
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