Thin-film transistor
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United States of America Patent
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-
Feb 27, 1990
Grant Date -
N/A
app pub date -
Apr 19, 1989
filing date -
May 19, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A thin-film transistor comprising a substrate, a gate electrode formed on said substrate and made of molybdenum-tantalum alloy containing 60 to 85 atomic % of tantalum gate insulation film formed on said gate electrode and made of a laminated layer including silicon nitride film and oxide film formed by oxidizing the surface of said gate electrode, semiconductor film formed on said gate insulation film and contacting the silicon nitride film, and source and drain electrodes formed on the semiconductor film.
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