Infrared detector circuit having a resistor series connected to the detector to limit the current across the pn junction of the FET
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United States of America Patent
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-
Mar 6, 1990
Grant Date -
N/A
app pub date -
Oct 12, 1988
filing date -
Oct 26, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A circuit for an infrared detector includes a field effect transistor and a gate resistor connected thereto. A current-limiting component, preferably an ohmic resistor, is connected in series with the detector element between the gate of the field effect transistor and ground, to limit the current across the pn junction of the field effect transistor.
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