Wafer flood polishing
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United States of America Patent
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-
Mar 20, 1990
Grant Date -
N/A
app pub date -
Oct 28, 1988
filing date -
Oct 28, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a chem-mech polishing process for planarizing insulators such as silicon oxide and silicon nitride, a pool of slurry is utilized at a temperature between 85.degree. F.-95.degree. F. The slurry particulates (e.g. silica) have a hardness commensurate to the hardness of the insulator to be polished. Under these conditions, wafers can be polished at a high degree of uniformity more economically (by increasing pad lifetime), without introducing areas of locally incomplete polishing.
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