Chemical vapor deposition apparatus having cooling heads adjacent to gas dispersing heads in a single chamber
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United States of America Patent
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Apr 3, 1990
Grant Date -
N/A
app pub date -
Sep 20, 1988
filing date -
Oct 2, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A single chamber apparatus for chemical vapor deposition of films on semiconductor substrates transported through the chamber. Heaters and a plurality of gas dispersing heads are disposed in the chamber for forming films by chemical vapor deposition. A cooling head is disposed between each adjacent pair of gas dispersing heads for cooling whereby the surface temperature of the substrates opposite the gas dispersing heads is substantially equal to that of the substrates located opposite the cooling heads.
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