Thin film solar cell and method of making
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United States of America Patent
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Apr 10, 1990
Grant Date -
N/A
app pub date -
Sep 22, 1988
filing date -
Sep 22, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A structure for, and method of making, thin films of Group I-III-VI compound semiconductors such as copper indium diselenide for use in heterojunction photovoltaic devices fabricated on metal substrates. An interfacial film containing gallium is first deposited upon the substrate. Thereafter, copper and indium films are deposited and the resulting stacked film is heated in the presence of a source of selenium to form copper indium diselenide semiconductor material with improved adhesion to the substrate and improved performance.
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