Method of preventing dielectric degradation or rupture
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United States of America Patent
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Apr 10, 1990
Grant Date -
N/A
app pub date -
Mar 14, 1989
filing date -
Mar 14, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Charge on a floating gate of a semiconductor device structure is neutralized by illuminating the structure with a high intensity light during process steps that inject charge. The light provides for the formation of electrons, or free carriers, in the semiconductor substrate. The electrons facilitate tunneling which prevents dielectric degradation or rupture.
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