Polysilicon resistor implanted with rare gas
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United States of America Patent
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Apr 10, 1990
Grant Date -
N/A
app pub date -
Oct 7, 1983
filing date -
Oct 7, 1982
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of fabricating a resistor in a polycrystalline semiconductor material includes rendering the material conductive by a heavy doping implantation of ions which are electrically active with respect to the material. Ions which are electrically inactive, for example, argon ions, are then implanted in an area of the material with a concentration that is controlled to form a resistor having a desired resistance value. The method permits the precise and accurate control of the fabrication of load resistors for logic circuits within a very wide resistance range, and the resulting resistance values are a linear function of the concentration of the inactive ions.
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