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Abstract

A device and method for liquid-phase thin film epitaxial growth are disclosed wherein yield and quality of semiconductors in the fabrication sequences are improved. The device comprises an electric furnace which is disposed outside a quartz tube, a plurality of boats which are disposed within the quartz tube in accordance with a sort of melting liquids and a plurality of auxiliary heating devices are disposed around the boats with a power source independent from the electric furnace. According to this fabrication sequence, after heating the inner part of the quartz tube up to a first temperature level by supplying the power source to the electric furnace, the melting liquids are firstly melted down enough by means of selectively heating the auxiliary heating devices up to a second temperature level higher than the first temperature level, the substrates are then moved to be in contact with the melting liquids and an epitaxial growth layer is consequently formed through selectively reducing the temperature of the auxiliary heating devices to other levels different from the first and second level.

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First Claim