Active matrix cell
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United States of America Patent
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-
Apr 17, 1990
Issued Date -
N/A
app pub date -
Jul 22, 1988
filing date -
Jul 31, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An active matrix cell includes a first conductor group formed on a transparent substrate, two-layered regions consisting of a semiconductor film and a first insulating film, a second insulating film and a second conductor group. The first conductor group forms the source and drain of a thin film transistor, pixel electrode, data line. One of the two-layered regions serves as an active region of the thin film transistor and the other of the two-layered regions serves as the intersection between the data and scanning lines. The second insulating film is buried in the gap between the two-layered regions and the first conductor group, and has substantially a same thickness as the two-layered regions. The second conductor group forms the scanning line and the part of the data line. A method of manufacturing the active matrix cell is also disclosed.
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