Method of forming metal interconnects
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United States of America Patent
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Apr 24, 1990
Grant Date -
N/A
app pub date -
Oct 31, 1988
filing date -
Oct 31, 1988
priority date (Note) -
Expired
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Abstract
Metal interconnects and method for forming same such that an intermediately formed aluminum layer provides an etch stop and etch mask during the tungsten etch back. The method may be used to form tungsten contacts without requiring pre-metal planarization of the semiconductor body.
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