High current-gain PNP transistor
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United States of America Patent
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May 8, 1990
Issued Date -
N/A
app pub date -
Feb 15, 1989
filing date -
Jun 11, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A high current gain high-frequency planar process PNP transistor comprising an emitter region and a surrounding annular collector. The surface of the transistor is covered with an insulative oxide layer, with an aperture to the emitter region. An overlaying metal layer is provided which substantially covers the base region between the emitter and collector. Connection to the emitter region is provided with an extension of the metal surface to the aperture. However except for this connection, the surface area above the emitter region is not covered by the metal layer. The resulting transistor provides a high-frequency PNP transistor with significantly enhanced Beta.
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