Device metallization, device and method
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United States of America Patent
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May 15, 1990
Grant Date -
N/A
app pub date -
Apr 4, 1988
filing date -
Apr 4, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A semiconductor device, device metallization, and method are described. The device metallization, which is especially designed for submicron contact openings, includes titanium silicide to provide a low resistance contact to a device region, titanium nitride and sputtered tungsten to provide a diffusion barrier, etched back chemical vapor deposited tungsten for planarization, and aluminum or an aluminum alloy for interconnection.
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