Proton conductive material and method of manufacturing thereof

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United States of America Patent

PATENT NO 4927793
SERIAL NO

07235735

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Abstract

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Proton conductive material comprising a compound of a monoclinic crystal structure which is in a reversibly reduced state from a compound of a similar monoclinic crystal structure represented by the general formula: Na.sub.x Al.sub.y Ti.sup.3+.sub.x-y Ti.sup.4+.sub.8-x O.sub.16, in which 1.5.ltoreq.x.ltoreq.2, 1.5.ltoreq.y.ltoreq.2, x.gtoreq.y. The compund of a monoclinic crystal structure, represented by the general formula: Na.sub.x Al.sub.y Ti.sup.3+.sub.x-y Ti.sup.4+.sub.8-x O.sub.16 is changed reversibly to a compound of a monoclinic crystal structure in a reduced state by a reducing treatment at a temperature within a range from 600.degree..degree.C. to 1000.degree. C. Such a compound of a monoclinic crystal structure which is in a reduced state is changed reversibly back to the compound of a monoclinic crystal structure, represented by the general formula: Na.sub.x Al.sub.y Ti.sup.3+.sub.x-y Ti.sup.4+.sub.8-x O.sub.16 by applying heat treatment in air at a temperature within a range from 1200.degree. C. to 1300.degree. C. A method of producing such proton conductive material comprises the steps of mixing starting alumina material, starting titania material and a sodium salt, sintering at a temperature within a range from 1000.degree. C. to 1300.degree. C. and then applying a reducing treatment in a hydrogen atmosphere at a temperature within a range from 600.degree. C. to 1000.degree. C.

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Patent Owner(s)

Patent OwnerAddress
KUREHA CHEMICAL INDUSTRY CO LTDTOKYO JAPAN TOKYO METROPOLIS

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hori, Saburo Tokyo, JP 11 127
Watanabe, Nobuhiro Matsudo, JP 36 151

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