Hall element device with depletion region protection barrier
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United States of America Patent
Stats
-
May 29, 1990
Issued Date -
N/A
app pub date -
Apr 25, 1986
filing date -
May 22, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An integrated circuit Hall element is disclosed. At least two current connection contacts and two sensor connection contacts are formed on the surface of the semiconductor body incorporating the Hall element. The active zone of the Hall element is located below the surface. A depletion region, depleted of mobile charge, is located between the surface and the active zone to provide isolation for the active zone, so that the Hall device output is linear and independent of changes in external temperature. A feedback circuit is provided to control the thickness of the depletion region.
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