Deposition of films onto large area substrates using modified reactive magnetron sputtering
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United States of America Patent
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Jun 5, 1990
Issued Date -
N/A
app pub date -
Aug 8, 1989
filing date -
Mar 22, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus and process for reactive magnetron sputtering wherein film deposition is controlled by placing a grid located over the primary plasma and an auxiliary plasma adjacent to the substrate. The auxiliary plasma is produced using a positively biased d.c. probe. Control of the deposited film properties is provided by varying the d.c. probe voltage and open area of the wire grid.
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