Importance

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Abstract

In a semiconductor amplifier of flip-flop address buffer circuit used for dynamic RAM to convert a TTL level address input signal to MOS logic level complementary address signals, a reference signal input section FET to which a mean TTL level signal is always applied is disconnected from the circuit in response to a feedback signal whenever a high-voltage TTL address signal is sensed. Further, the address signal input section is also disconnected from the circuit whenever a low-voltage TTL address signal is sensed. Therefore, power consumption can be reduced and substrate current which results from hot carriers can be reduced, thus resulting in such advantages that fluctuations of threshold level and deterioration in conductance of FETS both due to hot carriers can be prevented to improve the reliability and durability of the buffer circuit.

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First Claim