Method for etching windows having different depths
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jun 12, 1990
Grant Date -
N/A
app pub date -
Oct 12, 1989
filing date -
Oct 12, 1989
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Overetching of gate runners, which may be silicided, during window etching is prevented by opening windows in the dielectric to expose the top of the silicide layer on the runners and then depositing a metal, such as tungsten, which has a high etch selectivity with respect to the dielectric. Etching can then continue to open windows which expose the source/drain regions without overetching of the gate runners because the etch used has high selectivity with respect to the dielectric and the metal.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully