
US Patent No: 4,933,318
Number of patents in Portfolio can not be more than 2000
Plasma etch of masked superconductor film
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Jun 12, 1990
Issued date -
Dec 12, 1988
filing date -
07/283,417
serial no -
Expired
status
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Abstract
A method of manufacturing a thin film of an oxidic superconducting material in accordance with a pattern, in which a pattern is manufactured by means of etching using reactive ions and a mask of aluminium oxide or silicon oxide, said method enabling patterns having line widths smaller than 2 .mu.m to be manufactured with great accuracy without influencing the composition of the superconducting thin film in such a manner that the superconducting properties deteriorate.
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First Claim
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International Classification(s)
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Cited Art
| Patent Info | (Count) | # Cites | Year |
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| 4,657,844 Plasma developable negative resist compositions for electron beam, X-ray and optical lithography | 8 | 1985 | |
| 4,690,729 Tapered trench process | 42 | 1986 | |
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| 4,683,024 Device fabrication method using spin-on glass resins | 39 | 1985 | |
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| 4,560,435 Composite back-etch/lift-off stencil for proximity effect minimization | 104 | 1984 | |
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| 4,687,543 Selective plasma etching during formation of integrated circuitry | 32 | 1986 | |