Thin film oxide dielectric structure and method
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United States of America Patent
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Jun 26, 1990
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N/A
app pub date -
Mar 28, 1988
filing date -
Mar 28, 1988
priority date (Note) -
Expired
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Abstract
A metallic oxide such as aluminum oxide of significantly improved electrical properties is disclosed. The method of oxide formation includes a combination of soft porous anodization followed by transformation to a hard barrier form of oxide using inter alia low temperature electrolytes, constant voltage anodizing, and timely rate of current change responsive termination of the anodizing process. Use of the resulting oxide in electrical insulation, optic and other environments is contemplated.
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