Ion bombardment device with high frequency
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United States of America Patent
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-
Jul 3, 1990
Grant Date -
N/A
app pub date -
Jul 30, 1985
filing date -
Jul 31, 1984
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a high frequency ion plating device, when an evaporation substrate is intended to be rotated to form a uniform evaporated film, a variation in resistance of a contact in a rotating portion arises, making it almost impossible to provide a constant duration of high frequency discharge. A supply of a high frequency power to the substrate is effected through an auxiliary electrode such as a coil, and a dc voltage is induced in the auxiliary electrode and applied to the substrate simultaneously with a high frequency voltage. As a result of the coil the high frequency discharge is stabilized, and a stabilized supply of power is rendered possible.
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