Via filling by selective laser chemical vapor deposition
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United States of America Patent
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-
Jul 3, 1990
Grant Date -
N/A
app pub date -
Apr 12, 1988
filing date -
Apr 12, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Light from a Q-switched laser passes through a metal-containing gas and through a field oxide of an integrated circuit structure. The laser light is preferentially absorbed by an underlying substrate. The substrate, but not the oxide, is heated above a threshold temperature that allows rapid chemical vapor deposition of metal through a relatively deep via hole in the oxide. The oxide has low thermal conductivity. The upper portions of the via hole walls are not heated enough to allow deposition of metal thereon. The via hole therefore can be uniformly filled by deposition of the metal on the bottom of the via hole, with no obstruction or shadowing from buildup of deposited metal on the upper wall portions of the via hole.
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