Method for production of copper indium diselenide

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United States of America Patent

PATENT NO 4940604
SERIAL NO

07239742

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Abstract

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A polycrystalline CuInSe.sub.2 film is produced by adding a liquid cooling medium to a mixture of Cu, In and Se powders, grinding the resulting composition by means of a ball-mill to provide a slurry containing CuInSe.sub.2 of low crystallinity, drying and adding a binding agent to the slurry to form a paste, coating a substrate with the paste, and sintering the paste so applied under a nitrogen atmosphere. The starting materials that can be used are not limited to respective powders of the above-mentioned elements but may be Cu-Se and In-Se compounds and the method provides CuInSe.sub.2 of excellent quality on a mass production scale at low cost.

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Patent Owner(s)

Patent OwnerAddress
MATSUSHITA ELECTRIC INDUSTRIAL CO LTD 1006 OAZA KADOMA KADOMA-SHI OSAKA JAPANNot Provided

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kita, Yuutaro Osaka, JP 1 32
Murozono, Mikio Osaka, JP 13 790
Omura, Kuniyoshi Osaka, JP 5 600
Suyama, Naoki Osaka, JP 1 32
Takada, Hazime Osaka, JP 1 32
Ueno, Noriyuki Nara, JP 17 74

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