Method of anisotropically etching silicon wafers and wafer etching solution
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United States of America Patent
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Jul 17, 1990
Grant Date -
N/A
app pub date -
Oct 3, 1989
filing date -
Oct 3, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An improved method for anisotropically etching the (100) crystallographic plane of silicon wafers, involves immersing the wafers in an etching solution containing an aromatic compound having at least two adjacent hydroxyl groups and a polar functional group on the ring, an amine and water. A quality etch at an appreciably greater rate is achieved.
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