Plasma reactor apparatus and method for treating a substrate
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United States of America Patent
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Jul 24, 1990
Grant Date -
N/A
app pub date -
Mar 23, 1989
filing date -
Mar 23, 1989
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An apparatus and method for treating a substrate with an excited species removed from a plasma (15, 15a, 31, 52, 53) is described. The apparatus includes closed or open end tubes (13, 22, 30, 54 and 55) with apparatus or nozzles (16, 32, 56 and 57) for directing the excited species at a substrate (17, 33, 59) and a tunable plate or sliding short (11, 38, 39, 40) internal or external of the tubes for positioning the plasma in the tube during operation of the apparatus. Tuning or nozzle position or power variations are used. The method and apparatus is useful for depositing films, etching and the like.
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