Method of processing an article in a supercritical atmosphere
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United States of America Patent
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-
Jul 31, 1990
Grant Date -
N/A
app pub date -
Feb 28, 1989
filing date -
Feb 29, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
In a method of processing an article, the article is introduced into a supercritical atmosphere which is formed in a pressure vessel and which atmosphere comprises carbon dioxide. When the article comprises an exposed resist film on a surface layer formed on a substrate, the exposed resist film is selectively removed to leave a predetermined pattern in the supercritical atmosphere and is thus processed into a patterned resist film. After the surface layer is selectively etched through the patterned resist film to form a patterned surface layer, the patterned resist film may be introduced into the supercritical atmosphere to be completely removed from the patterned surface layer. On processing the article, such as a compact disc, a mechanical parts, or the like, the article may be also introduced into the supercritical atmosphere to be cleaned up.
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