Method of passivating crystalline substrates
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United States of America Patent
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Jul 31, 1990
Grant Date -
N/A
app pub date -
Jun 2, 1988
filing date -
Jun 2, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of bulk passivating a crystalline or polycrystalline substrate made from silicon, germanium, gallium arsenide or other III-V compounds, and II-VI compounds by exposing the substrate to a fluorine ion beam created by a Kaufman ion source. The Kaufman ion source is controlled so that the intensity of and duration of exposure to the fluorine ion beam is sufficient to bulk passivate the substrate. Preferably, the substrate is preheated to a selected temperature prior to the ion beam exposure.
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