Semiconductor devices and method of manufacturing the same

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United States of America Patent

PATENT NO 4949143
SERIAL NO

07296324

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Abstract

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The semiconductor devices include a semiconductor substrate, a first CCD region formed at the surface of said substrate, and a second CCD region having a side connected to said first CCD. A channel region of the first CCD region has a different channel potential at a latter part of the end transfer electrode corresponding to the portion of the first CCD region connected to the second CCD region.

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Patent Owner(s)

Patent OwnerAddress
KABUSHIKI KAISHA TOSHIBA1-1 SHIBAURA 1-CHOME MINATO-KU TOKYO 1050023 ?1050023

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Harada, Nozomu Kanagawa, JP 261 1653
Iesaka, Mamoru Kanagawa, JP 13 101
Uya, Shinji Kanagawa, JP 44 537

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