Adhesion layer for platinum based sensors
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United States of America Patent
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Aug 28, 1990
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N/A
app pub date -
Dec 23, 1988
filing date -
Dec 23, 1988
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Abstract
The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.
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- HONEYWELL INC.
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Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Foster, Ronald B | Garland, TX | 7 | 143 |
Holmen, James O | Minnetonka, MN | 11 | 466 |
Johnson, Robert G | Minnetonka, MN | 53 | 2224 |
Sridhar, Uppili | Garland, TX | 39 | 876 |
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