Adhesion layer for platinum based sensors

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United States of America Patent

PATENT NO 4952904
SERIAL NO

07289098

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The marginal adhesion of platinum to silicon nitride is a serious issue in the fabrication of microbridge mass air flow sensors. High temperature stabilization anneals (500.degree.-1000.degree. C.) are necessary to develop the properties and stability necessary for effective device operation. However, the annealing process results in a significant reduction in the already poor platinum/silicon nitride adhesion. Annealing at relatively high temperatures leads to the development of numerous structural defects and the production of non-uniform and variable sensor resistance values. The use of a thin metal oxide adhesion Layvr, approximately 20 To 100 angstromw in thickness is very effective in maintaining platinum adhesion to silicon nitride, and through the high temperature anneal sequence.

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Patent Owner(s)

  • HONEYWELL INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Foster, Ronald B Garland, TX 7 143
Holmen, James O Minnetonka, MN 11 466
Johnson, Robert G Minnetonka, MN 53 2224
Sridhar, Uppili Garland, TX 39 876

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