Gate turn-off power semiconductor component
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United States of America Patent
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Aug 28, 1990
Issued Date -
N/A
app pub date -
Mar 6, 1989
filing date -
Jun 3, 1986
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
In a gate turn-off power semiconductor component in the form of a field-controlled thyristor (FCTh) with (14) separated from each other by trenches (10), means of control which make possible a constricton of the current-carrying channel over the entire depth of the cathode finger (14) and at the same time do not increase or do not substantially increase the ON resistance of the component are additionally provided in the region of the trench walls (9). In an exemplary embodiment, a p-doped wall layers (4), which have a reduced doping concentration compared with the gate regions (8) on the trench floors are introduced into the trench walls (9) as means.
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