Method of manufacturing a semiconductor structure suitable for producing a multi-wavelength laser effect, and device obtained thereby
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United States of America Patent
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Sep 4, 1990
Issued Date -
N/A
app pub date -
Jun 13, 1989
filing date -
Oct 23, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A double heterostructure stack comprising confinement layers (CC) enclosing active layers (CA) is formed on a substrate (S), e.g. a N+ type gallium arsenide substrate. Selective etching is performed so as to lay bare the confinement layers at different depths, e.g. CC4, CC3, CC2. The confinement layers initially receive contact layers (CP) made of P-type gallium arsenide. Regions R1, R2, and R3 are formed through the contact layers to constitute junctions with the uppermost active layers (respectively CA1, CA2, CA3). Valleys (V10, V21, V32) are formed to isolate the above-defined elementary stacks. After a metal contact layer has been formed, and after the end surfaces have been optically prepared, a multi-wavelength laser device is obtained.
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