Isolation of p-n junctions
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United States of America Patent
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Sep 11, 1990
Grant Date -
N/A
app pub date -
Mar 14, 1988
filing date -
Mar 14, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
An isolation structure and method of fabrication thereof for use in isolation of p-n junctions and for use in multiplexed, multi-color LED arrays. The isolation structure is fabricated on a structure which has a p-n junction formed on a semi-insulating substrate by (1) diffusing dopants into predetermined regions thereof from the top of the structure to the semi-insulating substrate, the dopants being of the same dopant type as that contained in the top layer of the p-n junction and (2) ion-implanting predetermined regions of the top layer of the p-n junction to render them non-conductive.
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