Single crystal growing apparatus
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United States of America Patent
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Sep 18, 1990
Grant Date -
N/A
app pub date -
Apr 25, 1989
filing date -
Jul 5, 1988
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A horizontal Bridgman single crystal growing apparatus using a direct monitoring electric furnace suitable for a single crystal growing of III-V, II-VI group compound semiconductor materials (InP, CdTe, etc.) including a gallium arsenide (GaAs). The apparatus is composed of: a heater wire being formed around a quartz tube for supporting, a cylindrical double quartz tube arranged with cooling water or gas inlet and outlet for circulation externally and coated with gold thin film on the internal wall surface thereof, thereby the high temperature heating over 1240.degree. C. is possible to obtain within a short period of time and also the cooling is possible, and whole process of the single crystal growing can be observed directly with naked eyes.
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