US Patent No: 4,958,591

Number of patents in Portfolio can not be more than 2000

Apparatus for forming a functional deposited film by means of plasma chemical vapor deposition

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Abstract

Improvements in the apparatus for forming a functional deposited film by means of plasma chemical vapor deposition comprising a deposition chamber having a film forming space which is sealed and formed by a surrounding wall functioning as a cathode, an upper wall and a bottom wall, which contains a means for holding a cylindrical substrate functioning as an anode in the film forming space and which is provided with a film forming raw material gas supplying means, a means for impressing a discharging power between said cathode and said anode and a vacumming means, that the length L of said cathode and the interval d between the inside face of said cathode and the surface of said anode is so designed as to satisfy the equation: 5.ltoreq.L/d.ltoreq.40. According to this improved apparatus, a desired light receiving memer, even if it is of a large square, which is excellent in both homogeneity in the layer quality and uniformity in layer thickness can be stably and effectively prepared at a high deposition speed.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
CANON KABUSHIKI KAISHATOKYO49710

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Yamazaki, Itaru Kawasaki, JP 22 201

Cited Art

Patent Info (Count) # Cites Year
 
CANON KABUSHIKI KAISHA (1)
4,529,474 Method of cleaning apparatus for forming deposited film 67 1984
 
SHARP KABUSHIKI KAISHA (1)
4,615,299 Plasma CVD apparatus for making photoreceptor drum 7 1985
 
TOKYO SHIBAURA DENKI KABUSHIKI KAISHA (1)
4,501,766 Film depositing apparatus and a film depositing method 30 1983
 
XEROX CORPORATION (1)
4,466,380 Plasma deposition apparatus for photoconductive drums 28 1983

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
CANON KABUSHIKI KAISHA (9)
5,338,580 Method of preparation of functional deposited film by microwave plasma chemical vapor deposition 7 1992
5,540,781 Plasma CVD process using a very-high-frequency and plasma CVD apparatus 28 1994
5,534,070 Plasma CVD process using a very-high-frequency and plasma CVD apparatus 50 1994
5,718,769 Plasma processing apparatus 4 1995
5,558,719 Plasma processing apparatus 9 1995
5,582,648 Apparatus for preparing a functional deposited film by microwave plasma chemical vapor deposition 6 1995
5,902,405 Plasma processing apparatus 2 1997
6,435,130 Plasma CVD apparatus and plasma processing method 3 1997
5,945,353 Plasma processing method 1 1997
 
3M INNOVATIVE PROPERTIES COMPANY (3)
6,203,898 Article comprising a substrate having a silicone coating 25 1997
6,348,237 Jet plasma process for deposition of coatings 16 2001
7,189,436 Flash evaporation-plasma coating deposition method 1 2004
 
CALIFORNIA INSTITUTE OF TECHNOLOGY (3)
5,487,787 Apparatus and method for plasma deposition 17 1995
6,173,672 Diamond film deposition on substrate arrays 4 1997
6,406,760 Diamond film deposition on substrate arrays 8 2000
 
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (2)
5,695,565 VCR head drum coated with diamond-like hard carbon films and the method and apparatus for manufacturing the same 2 1995
5,938,838 VCR head drum coated with diamond-like hard carbon films and the method and apparatus for manufacturing the same 0 1997
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
5,133,986 Plasma enhanced chemical vapor processing system using hollow cathode effect 29 1990
 
MINNESOTA MINING AND MANUFACTURING COMPANY (1)
5,464,667 Jet plasma process and apparatus 58 1994
 
SANYO ELECTRIC CO., LTD. (1)
5,711,814 Method of and apparatus for forming film with rotary electrode 5 1996
 
UNITED MODULE CORPORATION (1)
6,315,879 Modular deposition system having batch processing and serial thin film deposition 5 2000
 
UNIVERSITY OF CENTRAL FLORIDA RESEARCH FOUNDATION, INC. (1)
5,240,749 Method for growing a diamond thin film on a substrate by plasma enhanced chemical vapor deposition 19 1991