Photovoltaic element with a semiconductor layer comprising non-single crystal material containing at least ZN, SE and H in an amount of 1 to 4 atomic %
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United States of America Patent
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Sep 25, 1990
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N/A
app pub date -
Aug 28, 1989
filing date -
Jul 21, 1987
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Expired
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Abstract
A photovoltaic element which generates photoelectromotive force by the contact of a p-type semiconductor layer and an n-type semiconductor layer, characterized in that at least one of said semiconductor layers is made up from a deposited film composed of zinc atoms, selenium atoms, optional tellurium atoms, and at least hydrogen atoms, said deposited film containing a p-type or n-type doping agent, containing 1 to 4 atomic % of hydrogen atoms, containing selenium atoms and tellurium atoms in a ratio of 1:9 to 3:7 (in terms of number of atoms), and also containing crystal grains in a ratio of 65 to 85 vol % per unit volume.
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