Sensor using a field effect transistor and method of fabricating the same
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United States of America Patent
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-
Oct 2, 1990
Issued Date -
N/A
app pub date -
May 15, 1989
filing date -
Aug 29, 1985
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Disclosed is a sensor using a field effect transistor. The sensor includes a field effect transistor having a gate electrode, a reactive monomolecular film formed on the surface of the gate electrode, and a sensing material fixed on the gate electrode through a reactive monomolecular film by the chemical bond. A sensing material is strongly bonded to the reactive monomolecular film in such manner that the sensing material is kept alive. Thereby, sensitivity of the sensor is improved.
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