Integrated circuits and a method for manufacture thereof
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United States of America Patent
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Oct 2, 1990
Issued Date -
N/A
app pub date -
Dec 7, 1989
filing date -
Mar 10, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A technique for providing a radiation formable conductive link in an integrated circuit comprising the steps of: depositing a plurality of aluminum conductors on an exposed surface of an otherwise completed integrated circuit, and forming a bridge of amorphous silicon layer joining the aluminum conductors at selected locations, whereby subsequent laser radiation produces diffusion of aluminum into the amorphous silicon, producing a highly conductive aluminum doped silicon bridge.
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