Sputtering process and an apparatus for carrying out the same

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United States of America Patent

PATENT NO 4963239
SERIAL NO

07301468

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Abstract

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A sputtering process of a substrate biasing system and an apparatus for carrying out the same, capable of forming a film in satisfactory surface coverage over stepped underlying layer. The present invention solves problems in the quality of films formed by the conventional sputtering process of a substrate biasing system by regulating the bias potential of a substrate on which a film is to be formed so that the kinetic energy of ions of a sputtering gas falling on the substrate is varied periodically. The bias potential is regulated by periodically varying the amplitude of the output of a radio frequency (or dc) bias power supply or by changing the duty factor of a voltage pulse stream of the output of the radio frequency (or dc) bias power supply.

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Patent Owner(s)

Patent OwnerAddress
HITACHI LTDTOKYO 100-8280

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujita, Shoyo Gunma, JP 1 104
Kamei, Tsuneaki Kanagawa, JP 13 588
Kawahito, Tsuneyoshi Yokohama, JP 5 188
Kobayashi, Shigeru Tokyo, JP 97 2038
Nakamura, Hiroshi Saitama, JP 877 11765
Sakata, Masao Yokohama, JP 51 1465
Shimamura, Hideaki Yokohama, JP 38 456
Yoneoka, Yuji Yokohama, JP 5 195

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