Method for manufacturing poly-crystal sillicon having high resistance
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United States of America Patent
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Oct 23, 1990
Grant Date -
N/A
app pub date -
Jul 27, 1988
filing date -
Jul 31, 1987
priority date (Note) -
Expired
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Abstract
Method for manufacturing polycrystalline silicon having high resistance, having a first step for depositing a polycrystalline silicon layer for a resistor area over a silicon semiconductor substrate; a second step for growing a first thermal oxide layer having a first specified depth over the polycrystalline silicon layer, ion-implanting with the nitrogen thereon, and growing a second thermal oxide layer having a second specified depth on the ion-implanted layer; a third step for forming a resistor pattern of the polycrystalline silicon with a photo etching method; and a fourth step for ion-implanting impurities in order to decrease the resistance of the polycrystalline silicon as contact regions to be used in resistance contacts with a fixed semiconductor region on the substrate.
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