Manufacturing process for a monolithic semiconductor device comprising at least one transistor of an integrated control circuit and one power transistor integrated on the same chip
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United States of America Patent
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Oct 23, 1990
Grant Date -
N/A
app pub date -
Dec 21, 1988
filing date -
Dec 22, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The device uses the horizontal insulating region and the buried layer as the power transistor base and emitter respectively. An epitaxial growth is interposed between the two diffusions needed to form the aforesaid regions and those needed to create the base and the emitter of the transistor of the integrated control circuit.
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