Schottky diode for integrated circuits

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United States of America Patent

PATENT NO 4965643
SERIAL NO

07319033

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Abstract

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An improved Schottky diode may be placed above an insulating layer such as the field oxide instead of within an epitaxial layer. The forward voltage, dynamic resistance and breakdown voltage may all be tailored.

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Patent Owner(s)

Patent OwnerAddress
UTMC MICROELECTRONIC SYSTEMS INC4350 CENTENNIAL BOULEVARD A DELAWARE CORPORATION COLORADO SPRINGS CO 80907

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Freeman, Guy R Colorado Springs, CO 2 37

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