Pure green light emitting diodes and method of manufacturing the same
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United States of America Patent
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Oct 23, 1990
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N/A
app pub date -
Nov 12, 1985
filing date -
Jul 28, 1982
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Abstract
Pure-green light emitting diodes include an n-type GaP layer formed on an n-type GaP substrate and a p-type GaP layer formed by using a liquid phase epitaxial method, the average donor concentration of the p-type GaP layer being less than or equal to 5.times.10.sup.16 cm.sup.-3. Liquid phase crystal growth of the above p-type GaP layer is realized by applying a method of keeping the melt used for the liquid phase crystal growth of the n-type GaP layer at a constant temperature and the ambient atmosphere at a reduced pressure for a prescribed period of time thereby to volatilize donor impurities from the melt and to compensate the donor impurities. Pure-green light emitting diodes easily distinguishable from yellow-green and having high brightness can be manufactured by applying the over-compensation method which is suitable for mass production.
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