Semiconductor device
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United States of America Patent
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Oct 23, 1990
Issued Date -
N/A
app pub date -
Feb 21, 1989
filing date -
Jun 6, 1986
priority date (Note) -
Expired
status (Latency Note)
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Abstract
This invention provides a semiconductor device having an electrode conductor layer on a semiconductor substrate through the medium of a diffusion barrier layer, comprising the diffusion barrier layer formed of an amorphous material having a higher crystallization temperature than the heat treatment temperature for the semiconductor device. According to this invention, the reaction between the metal conductor and the semiconductor substrate and the diffusion of the conductor material into the semiconductor substrate can be prevented and resultantly a semiconductor device having a high thermal reliability can be obtained.
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