Method of making a gallium arsenide phosphide-, mixed crystal-epitaxial wafer
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United States of America Patent
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Nov 6, 1990
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N/A
app pub date -
Jul 20, 1989
filing date -
Jun 19, 1985
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Expired
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Abstract
An epitaxial wafer for producing arrays of GaAsP-LEDs comprises, in the GaAs.sub.1-x P.sub.x layer with varying X, a layer region(s) with a discontinuous variance of x along the thickness of the GaAs.sub.1-x P.sub.x layer. This layer region(s) contribute to a uniformity in the brightness of the light emission of LEDs formed in the epitaxial wafer.
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