Process for fabricating small size electrodes in an integrated circuit
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United States of America Patent
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-
Nov 6, 1990
Grant Date -
N/A
app pub date -
Dec 12, 1989
filing date -
Dec 20, 1988
priority date (Note) -
Expired
status (Latency Note)
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Abstract
According to the invention, a first layer of conductive material (11) is submitted to an incomplete etching operation in the presence of a mask (13). After elimination of the mask, a second layer of conductive material is deposited, and the thus-obtained result is submitted to an etching operation without a mask, so allowing the inter-electrode gaps to be reduced. The process provides a very tight electrode configuration, and is particularly suited to charge-coupled devices.
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