Integrated structure for a signal transfer network, in particular for a pilot circuit for MOS power transistors
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United States of America Patent
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-
Nov 6, 1990
Issued Date -
N/A
app pub date -
Apr 3, 1990
filing date -
Mar 5, 1987
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The integrated structure is formed of various circuital components accomplished by diffusion of dopants in a semiconductor substrate. Each component is located inside a respective insulation recess electrically floating in relation to the substrate and the other components.
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