Bump and method of manufacturing the same
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United States of America Patent
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Nov 13, 1990
Grant Date -
N/A
app pub date -
Sep 23, 1988
filing date -
Sep 24, 1987
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
According to the present invention, there is provided a method for forming a bump and comprising the steps of dipping a semiconductor element with an Al electrode and a passivation film formed thereon in a palladium solution containing 5 to 2,000 ppm of at least one element selected from the group consisting of Zn, Pb, Sn, Cd, and Cr, selectively precipitating palladium on the electrode, and conducting electroless nickel-plating on the semiconductor element, including the electrode on which palladium is precipitated.
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